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Vigneshwaran Murugan - 九州工業大学 博士(工学) - 無機光吸収材料のプリンタブル太陽電池への応用

  1. 九州工業大学 (1204)
  2. 博士(工学) (737)
  3. Vigneshwaran Murugan

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書誌事項

タイトル

Inorganic light absorbers for printable solar cell applications

タイトル別名

無機光吸収材料のプリンタブル太陽電池への応用

著者名

Vigneshwaran Murugan

学位授与大学

九州工業大学

取得学位

博士(工学)

学位授与番号

甲生工第279号

学位授与年月日

2017-03-24

注記・抄録

MAPbI3 with chloride additive is the suitable material for planar architecture of perovskite solar cells and it also have very good photoluminescence property. Addition of chloride ions highly enhances the carrier life time, diffusion length, crystal formation and film morphology in MAPbI3. Different chloride based additives are highly crucial in deciding most of the physicochemical properties in lead based perovskite CH3NH3PbI3. In the present study optimized quantity and nature of chloride precursor used for formation of large perovskite crystals with minimal disorder were explored. It was found that the addition of ethyl ammonium chloride (EACl) increased the crystal size, which is nearly twice (158 nm) the size of standard perovskite crystals (93 nm) having a preferential orientation towards the (110) plane. Photoacoustic studies demonstrated that the disorder in the perovskite crystals was highly reduced by the addition of the EACl precursor. The effect of the alkyl chain length of an alkyl ammonium chloride precursor on the crystal growth of CH3NH3PbI3 was systematically investigated. In addition, we also used the different solvents in two step method with EACl to reduce the surface roughness of the perovskite layer.

Recently, bismuth based perovskites with the structure (CH3NH3)3Bi2I9 (MBI) are rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. Relatively wider bandgap of MBI (~ 2.1 eV) has been found to be a bottleneck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. Therefore, we demonstrated the bandgap engineering of novel bismuth based perovskites obtained by in-situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = Ethyl Xanthate) precursor. Color of the obtained films were clearly changed from orange to black when annealed from 80?C to 120?C with bandgap of 1.45 eV, which is even lower than that of most commonly used lead halide perovskites. After successfully reduced the bandgap of the materials, the electronic properties of the material was also studied to find its suitability in the solar cells. The electronic properties such as carrier concentration, mobility, and carrier life time was found to be higher in sulfur doped MBI when compared to undoped MBI.

九州工業大学博士学位論文 学位記番号:生工博甲第279号 学位授与年月日:平成29年3月24日

1. Introduction|2. Instrumentation & Characterization|3. Effects of different chloride precursors on crystal growth of lead halide perovskites|4. Sulfur doped low band gap bismuth based perovskites for solar cells application|5. General Conclusion

平成28年度

九州工業大学博士学位論文(要旨)学位記番号:生工博甲第279号 学位授与年月日:平成29年3月24日

目次

  1. 2017-10-02 再収集 / (index.pdf)

各種コード

NII論文ID(NAID)
500001036694
NII著者ID(NRID)
  • 8000001129923
本文言語コード
  • eng
大学ID

0071

CAT機関ID

KI000844

データ提供元
  • 機関リポジトリ
  • NDLデジタルコレクション

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九州工業大学 博士(工学) - 博士論文

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